Ferroelectric Field Effect Transistor

Ferroelectric Field Effect TransistorEffect
  • Coupling the ferroelectric polarization directly to the channel of a field effect transistor is a long-standing research topic that has been difficult to realize due to the properties of the.
  • Ferroelectric field-effect transistors (FeFETs) with semiconductors as the channel material and ferroelectrics as the gate insulator are attractive and/or promising devices for application in nonvolatile memory.
'FERROELECTRICS NEW RESEARCH '; 'FERROELECTRICS NEW RESEARCH '; 'CONTENTS '; 'PREFACE '; 'APPLICATION OF FERROELECTRICS: METAL FERROELECTRIC INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR '; 'ABSTRACT '; '1. INTRODUCTION OF FERROELECTRIC FIELD EFFECT TRANSISTOR '; 'Retention '; 'Leakage Current '; 'Depolarization Field'; 'Disturbance '; '2. STUDY FOR FEFET '; '2.1. Improvement of Ferroelectric Materials for MFIS FeFET '; '2.1.1. Photochemical Metal-Organic Deposition (PMOD) '; '2.1.1.1. Application of PMOD to the Formation of PZT Thin Films' '2.1.1.2. Application of PMOD to the Formation of Bi3.25La0.75Ti3O12 Thin Films ''2.1.2. Electron Beam-Induced Metal-Organic Deposition (EMOD) '; '2.1.2.1. Ferroelectric Properties of Sub 50-nm Direct-Patterned Pb(Zr, Ti)O3 Thin Films '; '2.1.3. Composition Control in the Chemical Solution Process '; '2.1.3.1. The Effects of Solvent on the Properties of Sol-Gel Derived PZT Thin Films '; '2.1.4. The Effect of Film Thickness and Annealing Temperature '; '2.1.4.1. The Effects of Film Thickness of PZT on the Crystallization and Ferroelectric Properties ' '2.1.4.2. Substrate Modification for the Direct Formation of PZT Films with Perovskite Structure ''2.1.5. Element Substitution in Ferroelectric Materials '; '2.1.5.1. Ferroelectric Properties of La Substituted Bi4Ti3O12 Thin Films '; '2.1.5.2. Structural and Electrical Properties of Bi4-XNdxTi3O12 Thin Films '; '2.1.5.3. Development of Sol-Gel Precursor System for PZT Thin Films Containing Various La Contents '; '2.1.5.4. Electrical Properties of PLZT Thin Films with Various Zr/Ti Ratios ' '2.1.5.5. Synthesis and Characterization of Ferroelectric Properties of Ce2Ti2O7 Thin Films with Ce3+ ''2.1.6. Ferroelectric Multilayer Structure'; '2.1.6.1. Stacking Effect on the Ferroelectric Properties of PZT/PLZT Multilayer Thin Films '; '2.1.6.2. Electric and Ferroelectric Properties of PZT/BLT and PZT/SBT Multilayer Thin Films'; '2.1.6.3. Formation of Multilayer Thin Films of Nd2Ti2O7 and Bi3.25La0.75Ti3O12 For Applying to Ferroelectric Field Effect Transistor '; '2.2.6.4. Effect of SrTiO3 Buffer Layer on the Phase Formation and Properties of BiFeO3 Thin Films ' '2.2. Study on the Improvement of Retention Property in MFIS-FeFET ''2.3.1. Insulator Materials in MFIS for Retention Improvement of FeFET '; '2.2.2. Ferroelectric Materials in MFIS for Retention Improvement of FeFET '; 'CONCLUSION '; 'REFERENCES '; 'RESONANT AND NON-RESONANT MICROWAVE ABSORPTION STUDIES IN MULTIFERROIC MATERIALS '; 'ABSTRACT'; '1. INTRODUCTION '; '2. EXPERIMENTAL METHODS '; '2.1. Resonant Microwave Absorption Measurement (EPR Technique) '; '2.2. Non-Resonant Microwave Absorption Measurements (MAMMAS and LFMA) '; '3. MULTIFERROIC MATERIALS STUDIES '

Ferroelectric Field Effect Transistor Definition

Electric field-effect-transistor (FeFET) based analog synapse (figure 1(b)). The FeFET synapse combines the ability to modulate the ferroelectric polarization charge using high speed weight update pulses 16 with a large dynamic range (G max/G min) due to the underlying metal-oxide-semiconductor field-effect transistor (MOSFET) (figure 1(b)). The field-effect transistor (FET) is a type of transistor that relies on an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a. Asif Khan and colleagues have now developed a spiking neuron structure that uses a ferroelectric field-effect transistor (FEFET) and a conventional.

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