Fet J201

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J201



Fairchild Semiconductor
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форма запроса
IC AMP GP N-CHAN 40V 50MA TO-92
Категория:
Discrete Semiconductor Products
TO-92
Год:
99+

Datasheet (Техническое описание) J201
Поиск в бесплатном архиве даташитов datasheet.su
Посмотреть все характеристики
Technical/Catalog InformationJ201
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)-
Current - Drain (Idss) @ Vds (Vgs=0)200??A @ 20V
Gate to Source Voltage (Vgs Max)*
Input Capacitance (Ciss) @ Vds -
Power - Max625mW
PackagingBulk
Package / CaseTO-92
Voltage - Cutoff (VGS off) @ Id300mV @ 10nA
Voltage - Breakdown (V(BR)GSS)40V
Resistance - RDS(On)-
Current Drain (Id) - Max-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names J201
J201

Fet

J201 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: J201

Тип транзистора: JFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.625 W

Предельно допустимое напряжение сток-исток Uds : 40 V

Предельно допустимое напряжение затвор-исток Ugs : 1.5 V

Максимально допустимый постоянный ток стока Id : 0.001 A

Максимальная температура канала (Tj): 150 °C

Тип корпуса: TO-92

J201 Datasheet (PDF)

0.1. 2sj201.pdf Size:268K _toshiba

2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -200 V High forward transfer admittance : Yfs = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -200 VJEDEC Gate-source voltag

0.2. j201.pdf Size:851K _fairchild_semi

J201 MMBFJ201J202 MMBFJ202GSTO-92GS SOT-23 NOTE: Source & DrainDD are interchangeableMark: 62P / 62QN-Channel General Purpose AmplifierThis device is designed primarily for low level audio and generalpurpose applications with high impedance signal sources. Sourcedfrom Process 52.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Uni

0.3. j201 j202 mmbfj201 mmbfj202 mmbfj203.pdf Size:783K _fairchild_semi

January 2008J201 - J202 / MMBFJ201 - MMBFJ203N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52.TO-92 SOT-2332MarkingMarking J201MMBFJ201 : 62PJ202MMBFJ202 : 62Q1 11. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute

0.4. j201 j202 j204c sst201 sst202 sst204c.pdf Size:78K _vishay

J/SST201 Series Vishay SiliconixN-Channel JFETsJ201 SST201J202 SST202J204 SST204PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J/SST201 -0.3 to -1.5 -40 0.5 0.2J/SST202 -0.8 to -4 -40 1 0.9J/SST204 -0.3 to -2 -25 0.5 0.2FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: J201

0.5. j201 j202 j203 j204 sst201 sst202 sst203 sst204.pdf Size:22K _calogic

N-Channel JFETGeneral Purpose AmplifierCORPORATIONJ201 J204 / SST201 SST204FEATURES ABSOLUTE MAXIMUM RATINGS(TA = 25oC unless otherwise specified) High Input Impedance Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40VGate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAStorage Temperature Range

0.6. cj201nl.pdf Size:151K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ201NL TRANSISTOR (NPN) SOT23 FEATURES High Collector Current Capability Low Collector-emitter Saturation Voltage High Efficiency Leading to Less Heat Generation 1. BASE Reduced PCB Requirements 2. EMITTER Alternatived Effectively to MOSFETS in Specific Applications

Fit 2018

0.7. lj2015-52.pdf Size:105K _china

Fit 2019

LJ2015-52FD75C NPN P T =25 75 WCM CI 10 ACMT 150 jmT -55~150 stgV I 2mA 50 V(BR)CBO CBV I 2mA 50 V(BR)CEO CEI V =20V 2 mACBO CBI V =20V 2 mACEO EBV 2.5 VBEsatI =5ACI =0.5AB

0.8. cs7456 lj2015-53.pdf Size:70K _china

LJ2015-53CS7456DP N P T =25 1.9 WD AI V =10V,T =25 5.7 AD GS AI 40 ADMV 20 VGST +150 jmT -55 +150 stgR 65thJA /WR 1.8thJCBV V =0V,I =0.25mA 100 VDSS GS DV =10V,I =9.3A 0.025

Другие MOSFET.. JFTJ105, J174, J175, J176, J177, MMBFJ175, MMBFJ176, MMBFJ177, IRF740, J202, MMBFJ201, MMBFJ202, J210, MMBFJ210, MMBFJ211, MMBFJ212, J270.




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Список транзисторов

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