Mosfet 200v

200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specificallyimprove t to he overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFET's feature faster switching and lower gate charge than other MOSFET's with comparable. FQP19N20, The FQP19N20 is a N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been. 200 V 100 A MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for 200 V 100 A MOSFET. IRFB 31N20D Power MOSFET N-channel TO-220AB 200 V 31 A. Item-No.: IRFB 31N20D. Delivery time: 4-9 business days. 2.2A 200V 1.500 Ohm N-Channel Power MOSFET. 9.5A 200V 0.400 Ohm N-Channel Power MOSFET. 200V N-Channel PowerTrench MOSFET.

This post explains for the semiconductor IRFP260N.

Part Number : IRFP260N

Mosfet

Function : Vdss=200V, HEXFET Power MOSFET

Package : TO-247AC type

Manufactures : International Rectifier, Infineon Technologies

See the preview image and the PDF file for more information.

Image

Decription

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

IRFP260N Pinout

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Features

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1. Advanced Process Technology
2. Dynamic dv/dt Rating
3. 175°C Operating Temperature
4. Fast Switching
5. Fully Avalanche Rated
6. Ease of Paralleling
7. Simple Drive Requirements

Absolute Maximum Ratings ( Tc = 25°C ) How to replace a bmw key battery.

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1. Continuous Drain Current : Vgs = 50 V
2. Pulsed Drain Current : Idm = 200 A
3. Power Dissipation : Pd = 300 W
4. Single Pulse Avalanche Energy : Eas = 560 mJ

IRFP260N Transistor Datasheet

Mosfet 200v

Related articles across the web

Infineon's P-channel enhancement mode power MOSFETs offer the designer a new option that can simplify circuitry while optimizing performance. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. P-channel power MOSFETs are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switched, DC-DC converters and low voltage drive applications. P-channel MOSFETs are often used in consumer electronics, such as notebook, laptops, cellphones and PDAs.

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Available packages include D²PAK, DPAK, DirectFET, IPAK, I2PAK, PQFN, SOT-223, TO-220, TO-247, SOT-23, TSOP-6 and SuperSO8 amongst others. Browse our product table to find a wide selection of highly innovative P-channel power MOSFETs including our OptiMOS™ product families, in voltage classes ranging from 12 – 250 volt.

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Download datasheets for detailed information.